Description The HIP4082 is a medium frequency, medium voltage H-Bridge N-Channel MOSFET driver IC, available in 16 lead plastic SOIC (N) and DIP-packages. Specifically targeted for PWM motor control and...
Description It is one of the best DIY kits for beginners who are looking to dive into embedded systems and the IoT (Internet of Things) field. This ESP32/NodeMCU Shield is...
Description It is one of the best DIY kits for beginners who are looking to dive into embedded systems and the IoT (Internet of Things) field. This ESP32/NodeMCU Shield is...
Description It is one of the best DIY kits for beginners who are looking to dive into embedded systems and the IoT (Internet of Things) field. This ESP32/Node MCU Shield...
Description It is one of the best DIY kits for beginners who are looking to dive into embedded systems and the IoT (Internet of Things) field. This NodeMCU Shield is...
Description Synchronous Step-Down DC/DC Converter is a type of DC-DC converter which provides an output regulated voltage that is lower than its input voltage. The FR9887 is a 340KHz Synchronous...
Description The FR9887 is a 340KHz Synchronous Step-Down DC/DC Converter. The typical applications of this device are Set-Top-Box, LCD Display (TV), Distributed Power System, Networking, and XDSL Modem. Synchronous Step-Down DC/DC...
Description :- IR Proximity Sensor module uses infrared rays to detect obstacles in the range of 2-10 CM. It has 3 pins i.e., Vcc, GND and Out. Operating current of...
Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized...
Description IRF530N is an N Channel Power MOSFET which is used to switch the power in power supply circuits, It has designed by the International rectifier. It has three terminal...
Description IRF540 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all...
Description IRF640 is a type of power MOSFET. It's also known as advanced power MOSFET, as we know that the power MOSFET has designed to work as a switching device....
Description IRF640A is a type of power MOSFET. It's also known as advanced power MOSFET, as we know that the power MOSFET has designed to work as a switching device....
Description An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned...
Description IRF9530 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced...
Description These IRFF9Z34N Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and...
Description IRFB20N50K is an N channel enhancement Power MOSFET with a low gate charge . And this MOSFET has improved gate, avalanche and dynamic ruggedness. It has fully characterized capacitance and...
Description An N-Channel MOSFET creates a current channel by using electrons. Electrons can move fast and readily via the current when the MOSFET is active and switched on. Because of...
Description An N-Channel MOSFET uses electrons to create a current channel. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of...
Description IRFB4310 is a power MOSFET. As we already know, the power MOSFET is designed to handle high levels of power. These MOSFETS perform significantly better than standard MOSFETs in the...
Description IRFB7537 is a power MOSFET. Its operating voltage is 60V its drain current is 173A. Its maximum power dissipation is 375W. It's a three-terminal device Gate drain and source....
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device...
Description IRFP22N60K is a type of MOSFET which is basically used for fast switching operation. It has fast recovery time that is its used for fast switching. There are the...
Description IRFP250M uses cutting-edge processing methods to provide extraordinarily low on-resistance per silicon area. This feature gives the designer a highly effective and dependable device for various applications, in addition...
