Description :- 2N3773 NPN High Power Transistor 140V 16A TO-3 Metal Package. The 2N3773 is a 140V Silicon NPN Complementary Power Transistor designed for high power audio, disk head positioners...
Description RJP4007 IC is an 8 Pin IGBT with VSON-8 Package. It is used in strobe flashlights of cameras. Datasheet Features• Small surface mount package (VSON-8)• VCES: 400 V• ICM:...
Description IXGP70N33 is a medium frequency insulated-gate bipolar transistor with high current handling capability. It features high power density and a very low switching loss, making it suitable for use...
Description It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for...
Description K120T60 is an Insulated Gate Bipolar Transistor. It is a Three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic...
Description TOSHIBA 2SC5859 is a high-power NPN transistor, The Transistor 2SC5859 is a high-power transistor with a collector current of 23A and collector to emitter voltage of 750V. It is used...
Description G4PC50W is an N-Channel Insulated Gate Bipolar Transistor(IGBT). It is a Through-hole(THD) IGBT Transistor which consists of three terminals Emitter, Gate, and Collector. It has low conduction losses and...
Description 2SC5858 is a triple diffused mesa type high power transistor, generally used in horizontal deflection output for HDTV, Digital TV, Projection TV. Datasheet Features High voltage Low saturation voltage...
Description TOSHIBA GT60N321 is a Silicon N-Channel Insulated Gate Bipolar Transistor with Low saturation voltage VCE (sat) is 2.3 V (Typ.) (IC = 60 A). It is a through-hole(THD) active...
Description 20N60S5 is a power transistor. As we know that power transistors are used for power switching. A three-terminal device known as a power transistor is made of semiconductor materials....
Description 2SC3998 Transistor is used in applications where high-speed switching and higher breakdown voltage are required. Features High speed (tf=100ns typ). High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP...
Description FAIRCHILD C2073 is a silicon NPN power transistor. It is a Through-hole(THD) active component that consists of three terminals Base, Collector, and Emitter. Datasheet Features TV vertical Deflection Output...
Description It is an Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode. Co-packaged IGBTs are a natural extension of the well-known IGBT range from International Rectifier. They combine the...
Description BU508A is an NPN triple diffused silicon power transistor. The Collector current "Ic" is a function of the base current "Ib", a variation in base current gives a corresponding...
Description 13007A STMicroelectronics is an NPN Switching Transistor designed for high voltage, high speed, power switching in an inductive circuit. The MJE13007A is a silicon multi-epitaxial mesa NPN power transistor mounted in Jedec...
Description The CT60AM-18F is an Insulated Gate Bipolar Transistor with a VCES of 900V, an IC of 60A, and an integrated fast-recovery diode. The VCE Saturation Voltage of the CT60AM-18F...
Description The 4N80 is a three-terminal silicon device with a current conduction capability of 4A, a fast switching speed, a low on-state resistance, an 800V breakdown voltage rating, and a...
Description RJP4009 IC is an 8 Pin IGBT with VSON-8 Package. It is used in strobe flashlight of cameras. Datasheet Features• Small surface mount package (VSON-8)• VCES: 400 V• ICM:...
Description This Insulated Gate Bipolar Transistor (IGBT) has a sturdy and cost-effective Ultra Field Stop Trench construction. It provides excellent performance in demanding switching applications, with low on-state voltage and...
Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching applications such as solar inverter, UPS,...
Description IGBT stands for insulated-gate bipolar transistor. It is a power transistor that combines an input MOS and an output bipolar transistor. The MC33153 is specifically designed as an IGBT...
Description The 11N120 is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of...
Description The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It isintended for power switching circuits and general-purpose amplifiers. The complementary. Datasheet Features Complementary to the MJE3055T Well-controlled hFE...
Description The Fairchild Power Switch FS7M-series is an integrated Pulse Width Modulator (PWM) and Sense FET specifically designed for high performance offline Switch Mode Power Supplies (SMPS) with minimal external ...
