Description IXTQ82N25P is a type of power MOSFET designed to be used as a power-switching device. It's used to switch the power in circuitry. It's used to protect the circuit...
Description STP55NF06 power MOSFETs have been developed using STMicroelectronics' unique "Single Feature Size" strip-based process, which is specifically designed to minimise input capacitance and gate charge. The resulting transistor shows...
Description An N-Channel MOSFET uses electrons to create a current channel. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of...
Description 2SK2225 is a MOSFET usually used for high-speed switching purposes. It has a break-down voltage and low drive current. The input impedance of this MOSFET is much higher than...
Description The CR5AS is a Silicon Controlled Rectifier (Thyristor) commonly used in medium power control and rectification. It is essentially a Shockley diode with an extra terminal added. This extra terminal is...
Description The IXFH90N30 300V 90A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic rectifier, and higher current handling capability that eliminates the need for multiple...
Description This GP4063D is an INSULATED BIPOLAR GATE TRANSISTOR MOSFET. GP4063D is a type of MOSFET which has three terminal emitters, a collector and a gate. It's used as an...
Description FQPF8N80C is a type of N- channel MOSFET its used in fast switching operation its maximum operating voltage is 800V. This component is best for high efficiency switch mode power supplies....
Description IRFZ34N International Rectifier's Fifth Generation HEXFETs use cutting-edge manufacturing methods to provide the lowest on-resistance per silicon area. This feature gives the designer a very effective device for usage...
Description 20N50 is an N- Channel MOSFET. It's a three-terminal silicon device, and the current capability is 20A it is used in fast switching operations its breakdown voltage rating is...
Description R30120G2 This device is designed to be used as a boost or free-wheeling diode in power supply and other power-switching applications. The short ta phase and low IRR minimize loss...
Description The N-channel Enhanced mode field-effect power transistor is used in motor control circuits, general purpose switching applications, T.V. and computer monitor power supplies, off-line switched mode power supplies, and...
Description 50N06L N-Channel enhancement mode power field effect transistors were created to use the exclusive planar stripe DMOS process developed by Fairchild. This cutting-edge technology has been specifically designed to...
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device...
Description The Super MOS® MOSFET is next-generation high voltage super-junction (SJ) technology. It differs from traditional SJ MOSFETs in that it uses a deep trench filling technique. Lowest R s...
Description SW20N65C is a power MOSFET it has designed by using the advanced power MOSFET designing technology. Its basically designed has to used in power supply switching circuits, As its...
Description K4202 is an N channel MOSFET which is basically used for switching applications its an electronic switch where we have no need of manual touch for switching its junction...
Description FDA69N30 is a type of MOSFET which is basically designed by the use of DMOS technology its used in switching applications its operating voltage is 300V and the current...
Description These N-Channel enhancement mode power field effect transistors are created using a proprietary planar stripe DMOS process developed by Fairchild. In the avalanche and commutation modes, this cutting-edge technology...
Description IRFB7537 is a power MOSFET. Its operating voltage is 60V its drain current is 173A. Its maximum power dissipation is 375W. It's a three-terminal device Gate drain and source....
Description The proprietary planar stripe and DMOS technology of Fairchild Semiconductor is used to manufacture this N-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically tailored to...
Description IRFP22N60K is a type of MOSFET which is basically used for fast switching operation. It has fast recovery time that is its used for fast switching. There are the...
Description MM60F060 is a type of MOSFET which is basically used for fast switching operation. It has fast recovery time that is its used for fast switching. There are the huge...
