The MDmesh M2 technology was used to create these N-channel Power MOSFETs(33N60M2 ). These devices have low on-resistance and optimum switching properties because of their strip layout and an improved vertical structure, making them suited for the most demanding high-efficiency converters.
Features
Model | 33N60M2 |
Type | MOSFET |
Brand | STMicroelectronic |
Drain Current | 104A |
Insulation withstand voltage | 2500V |
Gate Source Voltage | 25V |
Total power dissipation | 190W |
Operating and Storage Temperature Range | -55°C TO 150°C |