Description This P-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications....
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This P-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications.
Features:
1) VDS=60V, ID=&0A, RDS(ON)<10mΩ @VGS=10V
2) Low gate charge
3) Green device available
4) Advanced high cell density trench technology for ultra RDS(ON)