This P-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications.
Features:
1) VDS=60V, ID=&0A, RDS(ON)<10mΩ @VGS=10V
2) Low gate charge
3) Green device available
4) Advanced high cell density trench technology for ultra RDS(ON)
5) Excellent package for good heat dissipation
SPECIFICATION
| Model |
70P06 |
| Brand |
Doingter
|
| Drain-Source Voltage (VDS) |
60V |
| Gate-Source Voltage (VGS) |
±20V |
| Continuous Drain Current |
70A |
| Pulsed Drain Current |
200A |
| Operating Temperature |
-55°C~175°C |
| Package |
TO-252 |