This N-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications.
Features:
1) VDS=60V, ID=50A, RDS(ON)<17mΩ @VGS=10V
2) Low gate charge
3) Green device available
4) Advanced high cell density trench technology for ultra RDS(ON)
5) Excellent package for good heat dissipation
SPECIFICATION
Model |
DOD50N06 |
Brand |
Doingter
|
Drain-Source Voltage (VDS) |
60V |
Gate-Source Voltage (VGS) |
±20V |
Continuous Drain Current |
50A to 33A
|
Pulsed Drain Current |
200A |
Operating Temperature |
-55°C~175°C |
Package |
TO-252 |