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FDA59N30 N-Channel Enhancement Mode

FDA59N30 N-Channel Enhancement Mode

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Description FDA59N30  is an  N-Channel enhancement mode This N-Channel enhancement mode power field effect transistor is made utilizing a planar stripe, DMOS process that is exclusive to Fairchild. In the avalanche...
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SKU: ATC-3657
Vendor: ArrowTechCart

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Care Instructions

We advise routinely dusting your items with a gentle cleanser to preserve its look. Periodically, it may need to be softly wet with a mild detergent solution.

Collections: Triac & Mosfet
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Description

FDA59N30  is an  N-Channel enhancement mode This N-Channel enhancement mode power field effect transistor is made utilizing a planar stripe, DMOS process that is exclusive to Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to minimize on-state resistance, deliver improved switching performance, and withstand high energy pulses. These devices are ideal for active power factor correction and high efficiency switching mode power supply.

Features

  • 59A, 300V, RDS(on)= 0.056Ω@VGS= 10 V
  • Low gate charge ( typical 77 n C)

  • Low Cr s s( typical 80 pF)
  • Fast switching
  • Improved dv/dT capability

SPECIFICATION
Model FDA59N30 
Type MOSFET
Package TO-3P
Brand ONSEMI
Drain Current 236A
Repetitive avalanche energy 50mJ
Total power dissipation 500W
Operating and Storage Temperature Range -55°C TO 150°C