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FDA59N30 is an N-Channel enhancement mode This N-Channel enhancement mode power field effect transistor is made utilizing a planar stripe, DMOS process that is exclusive to Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to minimize on-state resistance, deliver improved switching performance, and withstand high energy pulses. These devices are ideal for active power factor correction and high efficiency switching mode power supply.
Features
Low gate charge ( typical 77 n C)
Improved dv/dT capability
| Model | FDA59N30 |
| Type | MOSFET |
| Package | TO-3P |
| Brand | ONSEMI |
| Drain Current | 236A |
| Repetitive avalanche energy | 50mJ |
| Total power dissipation | 500W |
| Operating and Storage Temperature Range | -55°C TO 150°C |
