Skip to product information
1 of 4

G33N50EF Power MOSFET with Fast Body Diode

G33N50EF Power MOSFET with Fast Body Diode

Regular price ₹ 0.00
Regular price Sale price ₹ 0.00
Sold Out
Tax included. Shipping calculated at checkout.
Description G33N50EF is a power MOSFET with a Fast body diode; It is a Through-hole(THD) active component that consists of three terminals Gate, Drain, and Source. Its fast body diode...
17 people are viewing this right now

AvailabilityIn stock

SKU: ATC-3627
Vendor: ArrowTechCart

Shipping & Returns

Free shipping and returns available on all orders!

We ship all orders within 5-10 business days

Care Instructions

We advise routinely dusting your items with a gentle cleanser to preserve its look. Periodically, it may need to be softly wet with a mild detergent solution.

Collections: Triac & Mosfet
View full product details

Description

G33N50EF is a power MOSFET with a Fast body diode; It is a Through-hole(THD) active component that consists of three terminals Gate, Drain, and Source. Its fast body diode uses E series technology; its drain-source voltage is 650V.

Applications

  •  Telecommunications - Server and telecom power supplies 
  • Lighting - High-intensity discharge (HID) - Light emitting diodes (LEDs) 
  • Consumer and computing - ATX power supplies 
  • Industrial - Welding - Battery chargers
  • Renewable energy - Solar (PV inverters)
  • Switch mode power suppliers (SMPS)
  • Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge

Features

  • High-speed switching Low input capacitance (Ciss)
  • Low on-resistance
  • No secondary breakdown
  • Low driving power
  • Reduced switching and conduction losses
  • Avalanche energy rated (UIS)
SPECIFICATION
Model G33N50EF 
Type  MOSFET
Package TO-247AC
Continuous drain current (Id) 21A
Pulsed drain current (Id pulse) 100A
Drain-Source Breakdown Voltage 600V
Max. power dissipation (Pd) 278W
Storage temperature range -55~150 (degree C)