G4PC50W is an N-Channel Insulated Gate Bipolar Transistor(IGBT). It is a Through-hole(THD) IGBT Transistor which consists of three terminals Emitter, Gate, and Collector. It has low conduction losses and minimal minority-carrier recombination that makes it an excellent option for resonant mode switching as well (up to >300 K Hz)
Features
Model | IRG4PC50W |
Brand | International Rectifier |
Transistor Type | N-Channel IGBT |
Collector to Emitter Breakdown (VCES) | 600V |
Continuous Collector Current (IC) | 55A |
Pulsed Collector Current (ICM) | 220A |
Power @max | 200W |
Mounting Type | Through Hole |
Operating Temperature | -55~150 degree C |
Package | TO-247AC |