These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY process. The result is very high voltage Power MOSFETs with outstanding performances. The strengthened layout, coupled with the company’s proprietary edge termination structure, gives the lowest Rds(on) per area, unrivalled gate charge, and switching characteristics.
Features
Applications
Model | 17N80C3 |
Channel Type | N-Channel |
Max. Drain-Source Voltage | 800V |
Max. Gate-Source Voltage | 20V |
Max. Gate-Threshold Voltage | 3.9V |
Max. Drain Current | 17A |
Max. Power Dissipation | 227W |
Total Gate Charge | 88nC |
Rise Time | 15ns |
Max. Drain-Source on-state Resistance | 0.29 ohm |
Package | TO-247 |