
IRF540 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Features
Applications
| Part Number | IRF540 |
| Package | TO-220-3 |
| Polarity | N Channel |
| Drain-Source Breakdown Voltage | 100 V |
| Continuous Drain Current | 33 A |
| Gate-Source Voltage | 20 V |
| Power Dissipation | 140 W |
| Gate Charge | 47.3 nC |