IRF540 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Features
Applications
Part Number | IRF540 |
Package | TO-220-3 |
Polarity | N Channel |
Drain-Source Breakdown Voltage | 100 V |
Continuous Drain Current | 33 A |
Gate-Source Voltage | 20 V |
Power Dissipation | 140 W |
Gate Charge | 47.3 nC |