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An N-Channel MOSFET creates a current channel by using electrons. Electrons can move fast and readily via the current when the MOSFET is active and switched on. Because of the unique features of N-Channel MOSFETs, carrier mobility is approximately 2 to 3 times that of a P-channel for the same RDS(on) value, hence the P-Channel chip must be 2 to 3 times the size of the N-Channel. As a result, adopting MOSFET transistor N-Channels for high current applications is frequently the favored option.
Features
Applications
| Model | IRFB3607 |
| Transistor Type | MOSFET |
| Channel Type | N-Channel |
| Max. Power Dissipation (Pd) | 140W |
| Max. Drain Source Voltage (Vds) | 75V |
| Max. Gate Source Voltage (Vgs) | 20V |
| Max. Drain Current (Id) | 80A |
| Total Gate Charge (Qg) | 56nC |
