An N-Channel MOSFET uses electrons to create a current channel. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N-Channel MOSFETs is approximately 2 to 3 times higher than in P-channel MOSFETs for the same RDS(on) value, thus the P-Channel chip must be 2 to 3 times the size of the N-Channel chip. As a result, MOSFET transistor N-Channels are frequently preferred for high current applications. Higher switching frequencies will allow you to design supplies with considerably wider control-loop bandwidth which can be provided by IRFB38N20, which is typically between a fifth and a tenth of the switching frequency. This is important because the wider the loop bandwidth, the fewer output filter capacitors are needed, leading to a cheaper design and smaller pc-board footprints. IRFB38N20 is an N-Channel Power MOSFET Transistor used in high-frequency DC-DC converters. 

FEATURES

•  Low Gate-to-Drain Charge to Reduce Switching Losses
•  Fully Characterized Capacitance Including Effective Cost to Simplify Design
•  Fully Characterized Avalanche Voltage and Current

SPECIFICATION