IRL520N is a third-generation Power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness. The I2PAK (TO-220) is a through-hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. IRF Mosfets need 10V at the gate to fully turn on. IRL Mosfets need 5V at the gate to fully turn on.
Features:
- Its N-Channel MOSFET
- Its used for Switching application
- Its Package is TO-220
- Its Power dissipation is 60W
SPECIFICATION
Part Number |
IRL520 |
Type of Control Channel |
N-Channel |
Maximum Power Dissipation |
60W |
Maximum Drain Source Voltage |
100V |
Maximum Gate Source Voltage |
10V |
Maximum Gate Threshold Voltage |
2V |
Maximum Drain Current |
9.2A |
Maximum Junction Temperature |
175°C |
Rise Time |
64nS |
Drain Source Capacitance |
150 pF |
Maximum Drain Source ON state Resistance |
0.27 ohm |