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The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for hard switching and resonant mode applications.
Features:
Applications:
| Model | IXFH20N100 |
| Brand | IXYS |
| Drain-Source Voltage (VDS) | 1000V |
| Gate-Source Voltage (VGS) | ±30V |
| Drain Power Dissipation | 660W |
| Operating Temperature | -55°C~150°C |
| Package | TO-247 |
