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Mitsubishi CT60AM-18F IGBT - 900V 60A High Voltage Current IGBT

Mitsubishi CT60AM-18F IGBT - 900V 60A High Voltage Current IGBT

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Description The CT60AM-18F is an Insulated Gate Bipolar Transistor with a VCES of 900V, an IC of 60A, and an integrated fast-recovery diode. The VCE Saturation Voltage of the CT60AM-18F...
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SKU: ATC-3565
Vendor: ArrowTechCart

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Care Instructions

We advise routinely dusting your items with a gentle cleanser to preserve its look. Periodically, it may need to be softly wet with a mild detergent solution.

Collections: Power Transistor
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Description

The CT60AM-18F is an Insulated Gate Bipolar Transistor with a VCES of 900V, an IC of 60A, and an integrated fast-recovery diode. The VCE Saturation Voltage of the CT60AM-18F is low, and there is little tail loss.

Features

  • VCES : 900 V
  • IC : 60 A
  • Integrated fast-recovery diode

Applications

  • Microwave oven
  • Electromagnetic cooking devices
  • Rice-cookers
SPECIFICATIONS
Model CT60AM-18F
Brand MITSUBISHI
Gate-emitter voltage 25V
Peak gate-emitter voltage 30V
Collector current 60A
Collector current (Pulse) 120A
Maximum Collector-Emitter Voltage |Vce| 900V
Emitter current 40A
Junction temperature -40°C - +150°C
Package TO3PL
Storage temperature -40°C - +150°C