Using novel field stop IGBT technology, ON Semiconductor’s /Fairchild's new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Features
Applications
Model | FGH60N60SMD |
Brand | FSC/ONSEMI |
Technology | Field Stop |
Channel Type | N |
Maximum Gate Emitter Voltage | ±20V |
Maximum Collector-Emitter Voltage | 600V |
Typical Collector-Emitter Saturation Voltage | 1.8V |
Maximum Continuous Collector Current | 120A |
Maximum Gate Emitter Leakage Current | 0.4µA |
Maximum Power Dissipation | 600000mW |
Operating Temperature | -55°C to 175°C |
Supplier Package | TO-247 |
Pin Count |