Model | 9N65 |
Brand | STMicroelectronics |
Transistor Type | MOSFET |
Type of Control Channel | N-Type |
Number of Channels | 1 |
Vds - Drain-Source Breakdown Voltage | 650V |
Id - Continuous Drain Current | 9A |
Rds On - Drain-Source Resistance | 26m ohms |
Vgs th - Gate-Source Threshold Voltage | 1.9V |
Qg - Gate Charge | 157nC |
Operating Temperature | -55°C - 175°C |
Pd - Power Dissipation | 330W |
Channel Mode | Enhancement |
Package | DIP |
Mounting | Through Hole |