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STP55NF06 power MOSFETs have been developed using STMicroelectronics' unique "Single Feature Size" strip-based process, which is specifically designed to minimise input capacitance and gate charge. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics that make it suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, also for applications where low gate driving charge is required.
| Model | STP55NF06 |
| Brand | STMicroelectronics |
| Drain-Source Voltage | 60V DC |
| Drain-Gate Voltage | 60V DC |
| Gate-Source Voltage | ±20V DC |
| Drain Current | 50A @ 25°C, 35A @100°C |
| Mounting | Through Hole |
| Package | TO-220 |
| Pulsed Drain Current | 200A |
| Power Dissipation | 30W |
| Single Pulse Avalanche Energy | 350mJ |
| Operating Temperature | -55°C to 175°C |
