
TK12A600 is a N-Channel MOSFET with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications.
Features
| Model | TK12A600N |
| Drain to Source Voltage (Vds) | 600V |
| Gte to source voltage (Vgs) | ±30V |
| Drain Current (Id) | 12A |
| Drain Power Dissipation (Pd) | 45W |
| Single Pulse Avalenche Energy | 359mJ |
| Avalanche Current | 12A |
| Repetitive Avalanche Energy | 4.5mJ |
| Channel Temperature | 150°C |