TK12A600 is a N-Channel MOSFET with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications.
Features
Model | TK12A600N |
Drain to Source Voltage (Vds) | 600V |
Gte to source voltage (Vgs) | ±30V |
Drain Current (Id) | 12A |
Drain Power Dissipation (Pd) | 45W |
Single Pulse Avalenche Energy | 359mJ |
Avalanche Current | 12A |
Repetitive Avalanche Energy | 4.5mJ |
Channel Temperature | 150°C |