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2SK3878 is a new generation high voltage MOSFET that employs an improved charge balance mechanism to achieve exceptional low on-resistance and lower gate charge performance. The cutting-edge technology has been designed to minimise conduction loss, provide improved switching performance, and withstand high dv/dt rates and avalanche energy. It is ideal for various AC/DC power conversions in switching mode operation for system miniaturization and higher efficiency.
Features
| Model | 2SK3878 |
| Brand | TOSHIBA |
| Drain Source Voltage | 900V |
| Drain Gate Voltage | 900V |
| Gate Source Voltage | ±30V |
| Drain Current | 9A |
| Drain Power Dissipation | 150W |
| Max. Channel Temperature | 150°C |
| Package | TO-247 |
| Mounting | Through Hole |
