Description An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned...
Description IRF9530 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced...
Description These IRFF9Z34N Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and...
Description IRFB20N50K is an N channel enhancement Power MOSFET with a low gate charge . And this MOSFET has improved gate, avalanche and dynamic ruggedness. It has fully characterized capacitance and...
Description An N-Channel MOSFET creates a current channel by using electrons. Electrons can move fast and readily via the current when the MOSFET is active and switched on. Because of...
Description An N-Channel MOSFET uses electrons to create a current channel. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of...
Description IRFB4310 is a power MOSFET. As we already know, the power MOSFET is designed to handle high levels of power. These MOSFETS perform significantly better than standard MOSFETs in the...
Description IRFB7537 is a power MOSFET. Its operating voltage is 60V its drain current is 173A. Its maximum power dissipation is 375W. It's a three-terminal device Gate drain and source....
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device...
Description IRFP22N60K is a type of MOSFET which is basically used for fast switching operation. It has fast recovery time that is its used for fast switching. There are the...
Description IRFP250M uses cutting-edge processing methods to provide extraordinarily low on-resistance per silicon area. This feature gives the designer a highly effective and dependable device for various applications, in addition...
Description International Rectifier's Fifth Generation HEXFETs employ cutting-edge manufacturing techniques to produce extraordinarily low on-resistance per silicon area. This feature gives the designer an exceptionally efficient and dependable device for...
Description IRFP264 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of...
Description IRFP27N60K is a type of MOSFET its also known as Power MOSFET which is basically designed to work as switch its a switching device its mostly used in power...
Description The IR MOSFET family of Power MOSFETs uses tried-and-true silicon manufacturing techniques to provide designers with a wide range of products to serve several applications, including battery-powered devices, DC...
Description The N-channel Enhanced mode field-effect power transistor is used in motor control circuits, general purpose switching applications, T.V. and computer monitor power supplies, off-line switched mode power supplies, and...
Description IRFZ34N International Rectifier's Fifth Generation HEXFETs use cutting-edge manufacturing methods to provide the lowest on-resistance per silicon area. This feature gives the designer a very effective device for usage...
Description IRFZ44 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of fast...
Description It is an Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode. Co-packaged IGBTs are a natural extension of the well-known IGBT range from International Rectifier. They combine the...
Description IRGPC50U is an IGBT MOSFET which is mostly known for its ultrafast feature. Its operating current is 27A, and the voltage is 600V. It has a soft recovery time...
Description IRL520N is a third-generation Power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-220) is a through-hole power...
Description :- ISD1820 Voice Recording module can be used for multi-segment recording. The mic is present on board and there is two pins (SP+ and SP-) present onboard to connect...
Description The ISL83202 is a medium-frequency H-Bridge FET driver with a peak drive current of 1A (typ) that is intended for driving high- and low-side N-Channel MOSFETs in medium-voltage applications....
Description It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for...
