Description IRFB4310 is a power MOSFET. As we already know, the power MOSFET is designed to handle high levels of power. These MOSFETS perform significantly better than standard MOSFETs in the...
Description IRFB7537 is a power MOSFET. Its operating voltage is 60V its drain current is 173A. Its maximum power dissipation is 375W. It's a three-terminal device Gate drain and source....
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device...
Description IRFP22N60K is a type of MOSFET which is basically used for fast switching operation. It has fast recovery time that is its used for fast switching. There are the...
Description IRFP250M uses cutting-edge processing methods to provide extraordinarily low on-resistance per silicon area. This feature gives the designer a highly effective and dependable device for various applications, in addition...
Description International Rectifier's Fifth Generation HEXFETs employ cutting-edge manufacturing techniques to produce extraordinarily low on-resistance per silicon area. This feature gives the designer an exceptionally efficient and dependable device for...
Description IRFP264 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of...
Description IRFP27N60K is a type of MOSFET its also known as Power MOSFET which is basically designed to work as switch its a switching device its mostly used in power...
Description The IR MOSFET family of Power MOSFETs uses tried-and-true silicon manufacturing techniques to provide designers with a wide range of products to serve several applications, including battery-powered devices, DC...
Description The N-channel Enhanced mode field-effect power transistor is used in motor control circuits, general purpose switching applications, T.V. and computer monitor power supplies, off-line switched mode power supplies, and...
Description IRFZ34N International Rectifier's Fifth Generation HEXFETs use cutting-edge manufacturing methods to provide the lowest on-resistance per silicon area. This feature gives the designer a very effective device for usage...
Description IRFZ44 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of fast...
Description It is an Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode. Co-packaged IGBTs are a natural extension of the well-known IGBT range from International Rectifier. They combine the...
Description IRGPC50U is an IGBT MOSFET which is mostly known for its ultrafast feature. Its operating current is 27A, and the voltage is 600V. It has a soft recovery time...
Description IRL520N is a third-generation Power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-220) is a through-hole power...
Description :- ISD1820 Voice Recording module can be used for multi-segment recording. The mic is present on board and there is two pins (SP+ and SP-) present onboard to connect...
Description The ISL83202 is a medium-frequency H-Bridge FET driver with a peak drive current of 1A (typ) that is intended for driving high- and low-side N-Channel MOSFETs in medium-voltage applications....
Description It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for...
Description IXTQ82N25P is a type of power MOSFET designed to be used as a power-switching device. It's used to switch the power in circuitry. It's used to protect the circuit...
Description IXTQ82N25P is a type of power MOSFET designed to be used as a power-switching device. It's used to switch the power in circuitry. It's used to protect the circuit...
Description 120N25T is an N-Channel Enhancement Mode, Avalanche Rated Fast Intrinsic Rectifier in TO-247 Package. The drain Source Breakdown Voltage is 250V. It is often used in DC-DC Converter, Battery Charger, Switch-Mode and...
Description IXYS IXFX44N80P is a three-terminal N-Channel Power MOSFET, It features an avalanche-rated and fast intrinsic diode. Its Voltage rating is 800V, its Current rating is 44A and its Driving voltage...
Description IXGP70N33 is a medium frequency insulated-gate bipolar transistor with high current handling capability. It features high power density and a very low switching loss, making it suitable for use...
Description The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple...
