Description Insulated gate bipolar transistors or IGBTs are a form of a discrete semiconductor device that is generally used for power applications such as inverters, converters and power supplies. IGBT...
Description D718 is a triple diffused epitaxial silicon NPN transistor. It is often used in high-power amplifier applications. It is recommended for the 45~50W Audio frequency amplifier output stage. Datasheet...
Description Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction...
Description Using novel field stop IGBT technology, ON Semiconductor’s /Fairchild's new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where...
Description The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec T0-220 package. It is for power switching circuits intended for general-purpose amplifiers. The complementary PNP type is MJE2955T. FEATURES:...
Description The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode applications such as...
Description The TIP42C is a -100V PNP complementary silicon plastic Power Transistor designed for use in general purpose power amplifier and switching applications. Its used in Switching applications Like in general...
Description The TTA1943 is a high power PNP transistor developed by Toshiba. It is often utilized in high power audio circuits or AF amplifiers due to its high current gain...
Description The base current for TIP127 transistor is about 120mA and the Emitter base voltage is 5V. TIP127 can switch loads up to 60V with a peak current of 8A...
Description TIP31C is an NPN-type Power Transistor. It has a gain value of 50 and a collector current of 3A. TIP31C is a three-layer NPN device within the working range,...
Description The 25N120 is a high voltage, high current IGBT that can switch up to 1200V and 50A. It is made using NPT (Non-Punch Through) trench technology, which results in...
Description The TTC5200 is a high power NPN transistor developed by Toshiba. It is often utilized in high power audio circuits or AF amplifiers due to its high current gain...
Description Its TIP32C PNP Bipolar Power Transistor 100V 3A TO-220. TIP32C is a silicon Epitaxial-base PNP power transistor packaged in a Jedec TO-220 plastic packaging. It's designed for medium-power linear and...
Description The IR MOSFET family of power MOSFETs utilises proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting,...
Description Its TIP122 NPN Power Darlington Transistor 100V 5A TO-220 Package, Based on its characteristics, this transistor may be utilised as a switch in various electrical circuits to drive various loads...
Description The BD140 is a medium power bipolar junction PNP transistor that is mostly utilised in complementary or quasi-complementary circuits in audio amplifiers and drivers. Its mounting style is through...
Description The BD139 is a NPN complementary low voltage NPN transistor in 3 pin Its package is TO-126. This device is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary...
