Description FCH041N60E is a type of MOSFET which is basically used for fast switching operation. It has fast recovery time that is its used for fast switching. There are the huge...
Description IXTQ82N25P is a type of power MOSFET designed to be used as a power-switching device. It's used to switch the power in circuitry. It's used to protect the circuit...
Description 23N50E is an N-Channel silicon power MOSFET used to switch the power. It's also known as an electronic switch. It's used in a switching regulator, UPS, SMPS, snubber and...
Description TOP Switch-GX uses the same proven topology as TOPSwitch, cost-effectively integrating the high voltage power MOSFET, PWM control, fault protection and other control circuitry onto a single CMOS chip....
Description The MSF8N80 is an N-channel enhancement-mode MOSFET that provides the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness to the designer. The majority of electrons...
Description IRFP264 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of...
Description Vishay's third-generation Power MOSFETs offer the optimum combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness to the designer. The TO-247 package is preferred for commercial-industrial applications where higher...
Description STP80NF70 is an N-Channel Power MOSFET. It has specifically been designed to minimize input capacitance and gate charge. The majority of electronic carriers that move in the channel are accountable...
Description WML11N65C2 Super Junction Power MOSFET In the N layer of J-MOS, there is a P layer that is fashioned like a pillar. Alternating layers of P and N are...
Description STP55NF06 power MOSFETs have been developed using STMicroelectronics' unique "Single Feature Size" strip-based process, which is specifically designed to minimise input capacitance and gate charge. The resulting transistor shows...
Description Third generation power MOSFETs from INFINEON provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. At power dissipation levels of up to 50...
Description The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency...
Description A metal–oxide–semiconductor field-effect transistor (MOSFET)is a field-effect transistor (FET with an insulated gate) where the voltage determines the conductivity of the device. SuperFET II MOSFET is a brand-new high-voltage super-junction...
Description International Rectifier's Fifth Generation HEXFETs employ cutting-edge manufacturing techniques to produce extraordinarily low on-resistance per silicon area. This feature gives the designer an exceptionally efficient and dependable device for...
Description The K2611 300V 90A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic rectifier, and higher current handling capability that eliminates the need for multiple...
Description TK12A600 is a N-Channel MOSFET with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications. Features...
Description IRFB20N50K is an N channel enhancement Power MOSFET with a low gate charge . And this MOSFET has improved gate, avalanche and dynamic ruggedness. It has fully characterized capacitance and...
Description The IRFB4115PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency...
Description P-Channel MOSFETs are the best option for high-side switches as a result of this. For low-voltage driving applications and non-isolated POLs, where space is at a premium, the design's...
Description 2SK3878 is a new generation high voltage MOSFET that employs an improved charge balance mechanism to achieve exceptional low on-resistance and lower gate charge performance. The cutting-edge technology has...
Description The BTA20 Triacs use high-performance glass passivated chip technology. The Snubberless concept offers suppression of the RC network and is suitable for applications such as phase control and static...
Description The IRFB7545PBF is an N-channel HEXFET Power MOSFET with increased gate, avalanche, and dynamic dV/dt robustness. It is appropriate for battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications,...
Description These IRFF9Z34N Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and...
Description DOD15N03 N-Channel Power MOSFET by Doingter is used for Fast Switching and Simple Drive Requirements. Features include Low Gate Charge and RoHS Compliant. Drain Source Voltage is 30V, and...
