Description The BS170N is a small signal N-channel Enhancement Mode MOSFET. It is made using high cell DMOS technology to minimize conduction loss, provide superior switching performance, and withstand extreme...
Description IRL520N is a third-generation Power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-220) is a through-hole power...
Description Available in high power packages, the BTA/BTB40-41 series is used for general purpose AC switching. This is mainly used in static relays, induction motor starting circuits. This triac can...
Description A LinkSwitch-HP device monolithically integrates a controller and high-voltage power MOSFET into one package.. It contains a newly created analogue control system that provides primary-side regulated (PSR), continuous conduction...
Description The ISL83202 is a medium-frequency H-Bridge FET driver with a peak drive current of 1A (typ) that is intended for driving high- and low-side N-Channel MOSFETs in medium-voltage applications....
Description This N-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications....
Description This P-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications....
Description IRF9530 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced...
Description P80NF55 power MOSFETs were created utilising STMicroelectronics' proprietary STripFET technology, which is especially engineered to decrease input capacitance and gate charge. As a result, the devices are suited for...
Description This BTA41-800B Triac is suitable for AC Switching. This is mainly used in static relays, induction motor starting circuits. This triac can also be used in phase control operations...
Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized...
Description Vishay's SI2301 is a P Channel Mosfet in a SOT-23 package. It's a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It...
Description It's a BTA12-600B 12A 600V TRIAC. It has non repetitive on state current 12A and rated repetitive off state voltage 600v, average gate power dissipation 1W. This type TRIAC generally...
Description The AO3402 30V 4A N-Channel MOSFET by Alpha & Omega uses advanced trench technology to provide outstanding RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V....
Description The AO3401 P-Channel MOSFET by Alpha & Omega uses advanced trench technology to provide outstanding RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device...
Description The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while...
Description Vishay's SI2301 is a P Channel Mosfet in a SOT-23 package. It's a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It...
Description Vishay's SI2302 is an N Channel Mosfet in a SOT-23 package. It's a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It...
Description Its BT139-800E 800 V 16A Triac TO-220, Four quadrant sensitive gate triac in a TO-220 plastic package for general purpose bidirectional switching and phase control applications. This sensitive gate...
Description IRF540 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all...
Description The BT131 is TRIAC with 1 A maximum terminal current. The gate threshold voltage of the BT131 is also very less so can be driven by digital circuits. Since TRIACs...
Description Vishay's SI2302 is an N Channel Mosfet in a SOT-23 package. It's a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It...
Description IRFZ44 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of fast...
